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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3550 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) *High Switching Speed *High Reliability APPLICATIONS *Switching regulators *Ultrasonic generators *High frequency inverters *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range w w scs .i w VALUE 900 UNIT V 800 10 3 1 80 150 -55~150 V V A A W .cn mi e PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 1A; IB= 0.2A B 2SC3550 MIN 800 900 10 TYP. MAX UNIT V V V 1.0 1.5 V V mA mA IC= 1A; IB= 0.2A B VCB= 900V; IE=0 Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w. w sem isc VEB= 10V; IC=0 IC= 1A; VCE= 5V .cn i 10 1.0 1.0 1.0 4.0 0.8 s s s IC= 1A, IB1= 0.4A; IB2= -0.8A; RL= 150; PW= 20s; Duty Cycle2% isc Websitewww.iscsemi.cn 2 |
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